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  Test Service

Our testing lab makes professional evaluation on semiconductor properties, including static characteristics, dynamic characteristics and thermal characteristics. Besides SPICE model extraction curves and discrete device datasheet, we are experienced in some special items such as S21 of TVS, dv/dt of MOSFET and fT of BJT. On account of the diversity of customer requirements, we will give an official quotation according to complexity and man-hour of your project.

Please refer to Table 1, Table 2 and Table 3 for test items available.

Table 1 Test Items of Diode

Test Category

Test Items

Note

Parameter

Symbol

Electrical Characteristics

Static Characteristics

Forward Voltage

VF

1.        The temperature range is from -40 to 200

2.        Curves and waveforms can be provided

3.        DCImax=400A, Vmax=3000V

4.        ACImax=1000A, Vmax=1200V

Reverse Current

IR

Breakdown Voltage

VBR

Average Rectified Output Current

IFAV

Dynamic Characteristics

Junction Capacitance

CJ

Reverse Recovery Time etc.

Trr/Ta/Tb/S

Peak Reverse Recovery Current

Irm

Reverse Recovery Charge

Qrr

Voltage Rate of Change

dv/dt

Thermal Characteristics

Maximum Power Dissipation

PD

 

Thermal Resistance, Junction to Ambient

Rthj-a

 

Thermal Resistance, Junction to Case

Rthj-c

or j-l according to the package

Special Characteristics

Insertion Loss

S21

 

Clamping Voltage

Vc

8/20μs and 10/1000μs

Dynamic Resistance

RDYN

TLP test

Single Pulsed Avalanche Energy

EAS

 

 

Table 2 Test Items of Transistor

Test Category

Test Items

Test Category

Parameter

 

Electrical Characteristics

Static Characteristics

Breakdown Voltage

V(BR)CEO/V(BR)CBO/V(BR)EBO

1.        The temperature range is from -40 to 200

2.        Curves and waveforms can be provided

3.        DCImax=400A, Vmax=3000V

4.        ACImax=1000A, Vmax=1200V

Cutoff Current

ICEO/ICBO/IEBO

DC Current Gain

hFE

Base-Emitter On Voltage

VBE(on)

Saturation Voltage

VBEsat/VCE(sat)

Dynamic Characteristics

Capacitance

Cobo/Cibo/Cre

Delay Time

Td

Rise Time

Tr

Storage Time

Ts

Fall Time

Tf

Thermal Characteristics

Maximum Power Dissipation

PD

 

Thermal Resistance, Junction to Ambient

Rthj-a

 

Thermal Resistance, Junction to Case

Rthj-c

 

Special Characteristics

Gain Bandwidth Product

fT

 

Insertion Power Gain

S21e2

 

Noise Figure

NF

Frequency Range: 10MHz~2.047GHz

 

Table 3 Test Items of MOSFET & IGBT

Test Category

Test Items

Test Category

Parameter

 

Electrical Characteristics

Static Characteristics

Breakdown Voltage

V(BR)DSS/V(BR)GSS

1.        The temperature range is from -40 to 200

2.        Curves and waveforms can be provided

3.        DCImax=400A, Vmax=3000V

4.        ACImax=1000A, Vmax=1200V

5.        For the IGBT, replace the drain and source MOSFET designations with collector and emitter IGBT designations, D = C and S = E

 

Zero Gate Voltage Drain Current/Gate-Source Leakage Current

IDSS/IGSS

Gate Threshold Voltage

VGSth

Static Drain-Source On Resistance

RDS(on)

Collector-Emitter Saturation Voltage

VCE(sat)

Diode Forward Voltage

VSD/VF

Dynamic Characteristics

Forward Trans-conductance

Gfs

Gate Input Resistance

Rg

Input/Output/Reverse Transfer Capacitance

Ciss/Coss/Crss

Effective Output Capacitance

Coer/Cotr

Switching Time

Td(on)/Tr/Td(off)/Tf

Switching Loss

Eon/Eoff

Diode Reverse Recovery Time etc.

Trr/Ta/Tb/S/Irrm/Qrr

Gate Charge

Qg/Qgs/Qgd

Short-circuit Current

Isc/IDM

Thermal Characteristics

Maximum Power Dissipation

PD

Thermal Resistance, Junction to Ambient

Rthj-a

Thermal Resistance, Junction to Case

Rthj-c

Special Characteristics

Single Pulsed Avalanche Energy

EAS

Note: Default test fixture is designed for TO and SMD, and new test fixture has to be made in advance for other package.

 

Contact Information

ContactVeronica Chou

Tel0571-86714088-6192

Emailzhoujun@skadogg.com

 

 

 
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